M2663
40V 6A eFuse with 60V surge tolerance
Reverse current blocking 0.2µs · Current monitor · UL/IEC 62368-1
0103
Company
Maxtrans Semiconductor Inc. is a Taiwan-based fabless IC design company specializing in Protection semiconductor solutions. Headquartered in Taipei with an R&D lab in Hsinchu.
Maxtrans focuses on delivering high-reliability protection ICs. Maxtrans provides not only components, but also complete protection solutions at the system level.
30+ years
Leadership team with 30+ years of experience in protection semiconductors
Industry backgrounds
Littelfuse, Amazing Microelectronic, UPI, Pericom
Taipei & Hsinchu
Headquarters in Taipei, R&D lab in Hsinchu
Products
Overvoltage To Reverse Polarity — One-Stop eFuse, Ideal Diode & TVS/ESD Solutions For Manufacturers.
eFuse
Maxtrans eFuse is a fully integrated electronic fuse designed to deliver fast, accurate, and reliable protection for modern power systems.
Ideal Diode
Maxtrans ideal diode controllers replace traditional Schottky diodes with MOSFET-based active control, delivering near-zero voltage drop, ultra-fast reverse protection, and high-voltage reliability for today’s demanding power systems.
TVS & ESD
A Transient Voltage Suppressor (TVS) diode is a protection device designed to protect electronic circuits from high-energy transient events such as lightning, surge, and inductive switching.
M74700
±100V ideal diode controller
3.2–80V · 0.7µs reverse current blocking · 1µA shutdown
M2200
22V active TVS with flat clamping
28V clamp @ 55A · ESD ≥30kV · 5nA leakage
Why Maxtrans
eFuse Benefits vs. Traditional solutions
eFuse
Fuse
PPTC
Operational Uses
High reliability to rerduce warranty and service cost
eFuseMultiple and no degradation after a fault
FuseOne Time
PPTCMultiple but with wear-out after a fault
Time to Trip
Avoid damage from inrush event
eFuse<2us
Fuse>ms
PPTC>ms
Current limit accuracy
Wide operation Temp range and smaller power supply
eFuseAccurate with adjustable I-limt
FuseInaccurate and needs derating with Temp
PPTCInaccurate and needs derating with Temp
After Fault
Flexible design without power off
eFuseAuto retry or Latch off
FuseBroken
PPTCAuto retry
Over Voltage Protection
Protect system from over voltage event
eFuseYes
FuseNA
PPTCNA
Under Voltage Lock Out
Keep system at right operation voltage
eFuseYes
FuseNA
PPTCNA
Soft-Start
Avoid inrush current from hot plug-in
eFuseYes
FuseNA
PPTCNA
Reverse Current Blocking
Avoid back current from Hold Cap for Hot-Swap applications
eFuseYes
FuseNA
PPTCNA
Real Time On/Off
Power rail control and power saving
eFuseYes
FuseNA
PPTCNA
Status Reports
Real time diagnostic and control
eFuseFault, Power Good, Current monitor
FuseNA
PPTCNA
Functions Integration
Small PCB size
eFuseIntegrated in small package
FuseNA
PPTCNA
Category
Ideal Diode IC
P-MOSFET + Discrete Circuit
Schottky Diode
Forward Voltage Drop
Ideal Diode IC10–40 mV (Rds_on)
P-MOSFET + Discrete Circuit50–150 mV, varies with gate drive
Schottky Diode0.25–0.50 V (fixed diode drop)
Power Loss / Heat
Ideal Diode ICVery low, cool operation
P-MOSFET + Discrete CircuitMedium, depends on MOSFET
Schottky DiodeHigh, gets hot quickly
Reverse Leakage
Ideal Diode ICExtremely low
P-MOSFET + Discrete CircuitMOSFET body diode leakage
Schottky DiodeHigh, increases with temperature
Response Time
Ideal Diode IC< µs-level, fast
P-MOSFET + Discrete CircuitSlow: body diode conduction first
Schottky DiodeInstant diode conduction but no control
Design Complexity
Ideal Diode IClow (drop-in IC)
P-MOSFET + Discrete CircuitHigh (gate drive, RC, layout tuning)
Schottky Diodelow (simple diode)
PCB Size
Ideal Diode ICSmallest
P-MOSFET + Discrete CircuitLarge (extra gate circuitry and P-MOS)
Schottky DiodeMedium–Large (for thermal reasons)
Reliability
Ideal Diode ICHighest
P-MOSFET + Discrete CircuitMedium (design-dependent)
Schottky DiodeMedium–Low (high heat)
System-Level Cost
Ideal Diode ICOften lowest (efficiency + smaller board)
P-MOSFET + Discrete CircuitMedium
Schottky DiodeHigh (due to heat & copper area)
Component
With Low-Clamp TVS
Traditional Design
TVS
Better protection
With Low-Clamp TVSMSHS24W2B3
Traditional DesignStandard TVS
MOSFET
~35% cost ↓
With Low-Clamp TVS↓ 40V possible
Traditional Design60V / 80V
Capacitor
~40% cost ↓
With Low-Clamp TVS↓ 35V possible
Traditional Design50V
PCB Space
Area ↓
With Low-Clamp TVSDFN2x2
Traditional DesignLarger
Applications
Applications
USB-C PD EPR 240W
Power up Type-C EPR 240W designs with robust protection: eFuse for OCP/OVP & hot swap, ideal diode for seamless reverse blocking & power mux, and TVS for fast surge suppression.
PoE 58V OR-ing
5–100V ideal diode with zero-loss switching, reverse current blocking, reverse polarity protection & OVP.
Battery Systems
Smart battery protection: eFuse for OCP/OVP & hot swap, ideal diode for reverse blocking & path control, TVS for fast surge suppression.
Robotics & Industrial
24V eFuse plus ultra-low clamp TVS. The 60V surge-capable eFuse with OCP, OVP, and reverse blocking ensures reliable performance in harsh industrial environments.